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• W2013327228 abstract "The kinetics of electrical activation of hydrogenated arsenic acceptors in MOVPE grown cadmium telluride layers was studied for arsenic doping in the range to . Thermal annealings were performed in the temperature interval 150-C with a duration from 1 s to 1 h. The hole concentration in the annealed samples was determined by the van der Pauw method and As-H pair concentration was deduced from the intensity of the LVM absorption line at , detected by Fourier transform spectrometry. Short annealing experiments (<1 min) showed a continuous increase in hole concentration with time and temperature, limited to about (1- at a temperature of C. The concentration of As-H pairs concurrently decreased but at a higher rate. Longer annealings usually led to a decrease in hole concentration while the As-H pair concentration either continued to drop or recovered depending on the value of arsenic doping. These results were interpreted in the framework of a theoretical analysis which took into account several processes: dissociation-recombination of impurity-hydrogen pairs, electronic ionization of arsenic impurities and electrical compensation due to the formation of arsenic-vacancy complexes. It was proposed that arsenic ionization takes place in two steps, the first one corresponding to a thermally activated conversion process and the second one to hole emission. The microscopic nature of the intermediary neutral impurity state is not known at present." @default.
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• W2013327228 date "1998-01-01" @default.
• W2013327228 modified "2023-10-18" @default.
• W2013327228 title "Annealing kinetics of hydrogenated As acceptors in MOVPE grown CdTe" @default.
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• W2013327228 doi "https://doi.org/10.1088/0268-1242/13/1/012" @default.
• W2013327228 hasPublicationYear "1998" @default.
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