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• W2013331828 abstract "We have analyzed the influence of the hydrogenated amorphous silicon (a-Si:H) thickness on the electrical performances of top gate thin-film transistors (TFTs). We have observed that, when the a-Si:H thickness increases, the threshold voltage and the subthreshold slope decrease. The modification of the TFT apparent field-effect mobility has also been investigated: we have shown that it first increases with the a-Si:H thickness, and then decreases for thicker a-Si:H films. This change of electrical performances is most likely associated with both the variation of a-Si:H microstructure during the film depositions and the effect of parasitic source and drain series resistances. We have demonstrated that for a given TFT geometry, it is therefore possible to define an optimum a-Si:H thickness ensuring maximum TFT electrical performances, and that this optimum thickness increases significantly with the TFT channel length." @default.
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• W2013331828 date "2001-02-01" @default.
• W2013331828 modified "2023-09-24" @default.
• W2013331828 title "Influence of the Amorphous Silicon Thickness on Top Gate Thin-Film Transistor Electrical Performances" @default.
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• W2013331828 doi "https://doi.org/10.1143/jjap.40.530" @default.
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