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- W2013393946 abstract "We have investigated a new method of in-situ after-treatment that precisely and anisotropically removes dry-etching damage induced by reactive-ion etching (RIE) of SiO 2 , especially in self-aligned contact (SAC) processing, through, low-energy etching in the dry-etching chamber after the RIE. This in-situ after-treatment with a CF 4 /Ar gas mixture and with a CF 4 /O 2 gas mixture were examined. The after-treatment with the CF 4 /O 2 gas almost completely removed both the chemical damage and the crystalline damage. On the other hand, although RIE damage could be reduced by after-treatment with the CF 4 /Ar gas mixture, severe crystal damage remained. The after-treatment with the CF 4 /O 2 gas mixture could precisely remove the surface damage and allowed us to control the surface roughness during removal of RIE damage." @default.
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- W2013393946 date "1998-04-01" @default.
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- W2013393946 title "In-situAfter-treatment Using Low-energy Dry-etching with a CF4/O2Gas Mixture to Remove Reactive Ion Etching Damage" @default.
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- W2013393946 doi "https://doi.org/10.1143/jjap.37.2330" @default.
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