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• W2013397917 abstract "Doubly stacked nanocrystalline-Si (nc-Si) based metal insulator semiconductor memory structure was fabricated by plasma enhanced chemical vapor deposition. Capacitance-Voltage (C-V) and capacitance-time (C-t) measurements were used to investigate electron tunnel, storage and discharging characteristic. The C-V results show that the flatband voltage increases at first, then decreases and finally increases, exhibiting a clear deep at gate voltage of 9 V. The de-creasing of flatband voltage at moderate programming bias is attributed to the transfer of electrons from the lower nc-Si layer to the upper nc-Si layer. The C-t measurement results show that the charges transfer in the structure strongly de-pends on the hold time and the flatband voltage decreases markedly with increasing the hold time." @default.
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• W2013397917 date "2013-01-01" @default.
• W2013397917 modified "2023-09-28" @default.
• W2013397917 title "The Charge Storage of Doubly Stacked Nanocrystalline-Si based Metal Insulator Semiconductor Memory Structure" @default.
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• W2013397917 doi "https://doi.org/10.4236/mnsms.2013.31b006" @default.
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