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- W2013412076 abstract "Supercritical fluid (SCF) technology was proposed to improve the dielectric properties of electron-gun evaporated aluminum oxide film in this work. The leakage current of film deposited at room temperature was suppressed significantly from at a bias voltage of after the SCF treatment mixed with water and propyl alcohol. The evolution of the leakage conduction mechanism was confirmed theoretically from trap-assisted quantum tunneling to the Schottky emission process due to the reduction of electric traps in the dielectric film. In addition, our work demonstrated the application of SCF-treated gate dielectric to a pentacene-based thin-film transistor." @default.
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- W2013412076 date "2009-01-01" @default.
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- W2013412076 title "Improvement of Electron-Gun Evaporated Aluminum Oxide for Pentacene Thin-Film Transistor" @default.
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- W2013412076 doi "https://doi.org/10.1149/1.3007423" @default.
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