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- W2013436698 abstract "Abstract The effect of strain and defects, within a diamond substrate, on the growth of homo-epitaxial CVD diamond has been investigated. The strategy employed is to create laterally confined regions of strain in the substrates by focused MeV implantation of light ions. Raman microscopy has been employed to obtain spatially resolved maps of the strain in these implanted regions. A homo-epitaxial CVD diamond film was grown on top of both the implanted and unimplanted regions of the substrate. Raman analysis of the film grown on top of the implanted region revealed it to be under slightly tensile strain, compared with that grown on the unimplanted diamond substrate. The film deposited on the implanted portion of the diamond showed a lower fluorescence background. The results indicate that defects and strain in the diamond substrate can effect the nature of homo-epitaxial diamond growth." @default.
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- W2013436698 date "1996-04-01" @default.
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- W2013436698 title "Homo-epitaxial diamond film growth on ion implanted diamond substrates" @default.
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- W2013436698 doi "https://doi.org/10.1016/0925-9635(95)00423-8" @default.
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