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• W2013446514 abstract "High-quality ferroelectric thick films are required for various piezoelectric applications including high-frequency transducers and microelectromechanical systems. In this work, we report the fabrication of dense crack-free lead zirconate titanate (PZT) thick films on Pt-coated Si substrates using commercial PZT powder dispersed in a sol–gel precursor solution without viscous additives. Preannealed films were infiltrated with the same solution and heat treated at 500 °C. Dielectric and ferroelectric properties of the films are found to be strongly dependent on the number of infiltration steps reaching sufficiently high values: dielectric constant ∼2270 and remanent polarization ∼35 μC cm−2. Moderate coercive field of 60 kV cm−1 and low dielectric loss ∼0.04 are observed in these films. Effective longitudinal piezoelectric coefficient d33 also depends on the number of infiltrations demonstrating remanent value of ∼80 pm V−1 for eight infiltration steps. The results show the suitability of hybrid sol–gel method for the fabrication of PZT thick films for dielectric and piezoelectric applications." @default.
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• W2013446514 date "2007-02-01" @default.
• W2013446514 modified "2023-09-23" @default.
• W2013446514 title "Electrical properties of lead zirconate titanate thick films prepared by hybrid sol–gel method with multiple infiltration steps" @default.
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• W2013446514 doi "https://doi.org/10.1016/j.matchemphys.2006.05.003" @default.
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