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• W2013487130 abstract "The characteristics of amorphous silicon thin-film transistors fabricated by chemical vapor deposition method is discussed in detail in conjunction with posthydrogenation. As the hydrogenation around an active interface starts, the transistor performance is abruptly improved and then does not change with further hydrogenation. A critical condition for hydrogenation for such an abrupt improvement may be accounted for based on a simple formula using a transit time of hydrogen atoms. A desirable thickness of amorphous silicon films for high performance TFT is thicker than 100 nm. In addition, it is recommended that hydrogenation is to be made at a temperature as low as possible as long as it can be possible." @default.
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• W2013487130 date "1993-01-01" @default.
• W2013487130 modified "2023-09-27" @default.
• W2013487130 title "The effects of post-hydrogenation on amorphous-silicon thin-film transistors" @default.
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• W2013487130 doi "https://doi.org/10.1002/ecjb.4420761008" @default.
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