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- W2013564712 abstract "The effects of low‐dose ion implantation of inert gas ions, prior to thermal annealing on the interactions between Pt and thin films with various forms of silicon, have been investigated. Specimens were implanted with Kr2+ and then annealed along with unimplanted samples in the temperature range 350°–650°C. The extent of silicide formation and the phases formed were determined by Auger electron spectroscopy (AES), x‐ray diffraction, and transmission electron microscopy (TEM). The unimplanted Pt films reacted to form complete layers of which then continued to react to form highly textured layers of . However, in the implanted samples, no distinct layers were observed, and the final phases were fine grained and polycrystalline. In the case of films, ion implantation inhibited the formation of the distinct Pt silicide layers found during the early stages of the reaction in unimplanted samples. The differences between implanted and unimplanted samples became progressively smaller with increasing annealing temperature. The final phase formed in both types of specimens was the ternary silicide, ." @default.
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- W2013564712 date "1983-03-01" @default.
- W2013564712 modified "2023-09-23" @default.
- W2013564712 title "Effects of Ion Implantation on the Thermal Growth of Pt and NiPt Silicides" @default.
- W2013564712 doi "https://doi.org/10.1149/1.2119783" @default.
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