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• W2013567319 abstract "The reactive magnetron sputtering technique at room temperature was used to prepare AlN dielectric layer for application in AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs). Two different gas ambiences (mixture of nitrogen and argon N2/Ar=0.35 and N2 alone, respectively) were applied. An increase in the saturation drain current (∼50%) and transconductance (∼45%) of the MIS-HFETs compared with HFET counterparts (IDS=363 mA/mm and gm=114 mS/mm) was observed. AlN/AlGaN/GaN MIS-HFET, where only the nitrogen gas ambience was used to deposit an AlN dielectric layer, reduced the gate leakage current up to four orders of magnitude (∼10−8 A/mm at −5 V) in comparison with the HFET. The improvements of the dynamic characteristics of the MIS-HFETs (reduction of the current collapse and density of the slow traps) were achieved. The N2 MIS-HFET exhibits better improvements of the static and dynamic parameters than the ArN2 MIS-HFET, and therefore the deposition of the AlN layer in the N2 alone is more effective." @default.
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• W2013567319 date "2011-01-01" @default.
• W2013567319 modified "2023-10-18" @default.
• W2013567319 title "Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering" @default.
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• W2013567319 doi "https://doi.org/10.1116/1.3523362" @default.
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