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- W2013587975 abstract "Stoichiometric CuInSe2 films were prepared by flash evaporation on Mo or glass substrates. Structural characterization was carried out by microprobe, X-ray, scanning and transmission microscopy studies. These indicated the presence of the chalcopyrite phase, nearly stoichiometric composition, and that the deposits were relatively uniform. The properties were found to be strongly dependent on the substrate and source temperatures. As-deposited stoichiometric samples obtained at a substrate temperature of 490°C were always p-type with typical electrical parameters of carrier concentration, p = 9 × 1019cm−3, mobility, μp = 4 cm2V−1s−1 and resistivity, ϱ = 3 × 10−2 Ω cm as determined from Hall measurements and electrical resistivity studies. Doping these films by In diffusion changed the conductivity to n-type with n = 7 × 1018cm−3, μn = 2 cm2V−1s−1and ϱ = 22 × 10−2 Ω cm. Optical absorption studies indicate a direct bandgap of 1.02 eV. The photoactivity of the films was tested in photoelectrochemical cells with configuration Mo/n-CuInSe2/I−, I3−/C which gave photocurrents of up to 10 mA cm−2 and photovoltage of 200 mV under 85 mW/cm−2 intensity of illumination." @default.
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- W2013587975 date "1988-08-01" @default.
- W2013587975 modified "2023-09-24" @default.
- W2013587975 title "Flash evaporation of CuInSe2 films" @default.
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- W2013587975 doi "https://doi.org/10.1016/0165-1633(88)90015-9" @default.
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