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- W2013612564 abstract "Nitrogen doped ZnSe layers have been grown on (100) GaAs substrates by metalorganic vapor phase epitaxy using NH3 as the doping material. The N-doped layers exhibit strong free to acceptor transition emission at 77 K and an acceptor bound-exciton emission line at 15 K. The layers with a high doping condition exhibit p-type conduction with resistivities from 102 to 103 ω cm, whereas undoped layers show high resistivity of about 105 ω cm. The N-doped layers have carrier concentrations in the order of 1014 cm−3 and mobilities from 20 to 50 cm2/V·s. The p-type conduction has been confirmed by the current-voltage characteristics of N-doped ZnSe heterojunctions formed on GaAs substrates." @default.
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- W2013612564 date "1988-01-01" @default.
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- W2013612564 title "Nitrogen-doped p-type ZnSe films grown by MOVPE" @default.
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- W2013612564 doi "https://doi.org/10.1016/0022-0248(88)90605-7" @default.
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