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- W2013642435 abstract "Top gate and bottom gate amorphous silicon thin film transistors where the dielectric has been replaced by an air gap have been fabricated on glass substrates using surface micromachining techniques. Bridges were formed by using low density silicon nitride as a sacrificial layer. In bottom gate structures the bridge material was amorphous silicon and in top gate structures it was highly doped n+ microcrystalline silicon. The first working devices show transistor behavior with field effect mobilities between 0.1 and 0.5 cm2 V−1 s−1." @default.
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- W2013642435 date "1998-07-27" @default.
- W2013642435 modified "2023-10-17" @default.
- W2013642435 title "Air-gap amorphous silicon thin film transistors" @default.
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- W2013642435 doi "https://doi.org/10.1063/1.121914" @default.
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