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• W2013643569 abstract "Abstract Iron silicide thin films (∈-FeSi, α-FeSi 2 and β-FeSi 2 ) were grown on silicon (111) substrates using the metalorganic vapour phase epitaxy (MOVPE) process with iron pentacarbonyl (Fe(CO) 5 ) and disilane (Si 2 H 6 ) precursors. Attention was mainly paid to the β-FeSi 2 phase. Transmission electron microscopy (TEM) and X-ray diffraction measurements allowed optimization of the growth process and revealed the nature and structure of the layers grown on the silicon substrate. A growth model is discussed and the action of the thermal annealing, which leads to the coalescence of the dendrites to form a continuous film of β-FeSi 2 up to about 1000 A thick, is described. Finally a photoluminescence signal has been detected in the range of the expected direct band gap value of β-FeSi 2 ." @default.
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• W2013643569 date "1994-11-01" @default.
• W2013643569 modified "2023-09-30" @default.
• W2013643569 title "Iron silicide growth on Si(111) substrate using the metalorganic vapour phase epitaxy process" @default.
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• W2013643569 doi "https://doi.org/10.1016/0022-0248(94)90006-x" @default.
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