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- W2013665600 abstract "Hydrogenated amorphous silicon carbide a-Si x C 1−x :H films of various compositions [Formula: see text] were deposited using a plasma-enhanced chemical vapour deposition technique. The as-deposited films are under high compressive stress (1 GPa). The control of the stress relaxation is an important stage in the X-ray mask technology. The stress of the a-Si x C 1−x :H films is measured by the wafer bow technique, whereas the resonance frequency and the bulge techniques are used to measure the stress of the a-Si x C 1−x :H free-standing membranes. These three methods give similar results and it is pointed out that the wafer bow technique can be used with confidence to determine the stress of a-Si x C 1−x :H films intended to X-ray membrane processing. From the bulge method, the biaxial Young's modulus E/(1–ν) of the a-Si x C 1−x :H membranes is also deduced. Values of 200 ± 25 GPa are obtained for a-Si x C 1−x :H films at x = 0.4 and 0.5 film compositions. At x = 0.67, E/(1–ν) is reduced by a factor of about two. The structure and composition of the a-Si x C 1–x :H films were investigated by means of elastic recoil detection, X-ray diffraction, and Fourier transform infrared absorption techniques. It is shown that the biaxial Young's modulus increases with the Si–C bond density in the film." @default.
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- W2013665600 date "1992-10-01" @default.
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- W2013665600 title "Mechanical properties of silicon carbide films for X-ray lithography application" @default.
- W2013665600 doi "https://doi.org/10.1139/p92-132" @default.
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