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- W2013676204 abstract "Abstract The sputtering of SiO2 by means of Ar-ions of approximately 1 keV in a RIE reactor has been monitored using laser interferometry. Results were interpreted with a simulation program which takes layer composition and thickness into account. The results of this simulation suggest that oxygen is preferentially sputtered and that the top layer is depleted to elemental Si up to a depth of 85 A." @default.
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- W2013676204 title "Deep surface damage of SiO2 by sputtering with low energy Ar-ions" @default.
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- W2013676204 doi "https://doi.org/10.1016/0039-6028(89)90151-9" @default.
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