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- W2013729895 abstract "A threading dislocation density (TDD) reduction method for GaN films is described. Thin amorphous layers of Sc, Hf, Nb, Zr and Cr were deposited on MOVPE-grown GaN-on-sapphire templates with a TDD of 5 × 109 cm–2 and annealed in NH3 to form metal nitrides. The ScN layer remained continuous, with a very low pinhole density, while the HfN layer contained a high pinhole density of approximately 3 × 109 cm–2. The NbN and ZrN layers formed oriented holey network structures. The Cr layer did not nitride. Coalesced GaN epilayers grown on the ScN layers had the lowest dislocation density of 3 × 107 cm–2 (un-coalesced GaN on ScN had TDDs as low as 5 × 106 cm–2). Unlike GaN films grown using multiple SiNx interlayers, which contain a similar proportion of edge and mixed dislocations, the GaN-on-ScN layers contain substantially fewer mixed than edge dislocations, a proportion similar to that of the high-TDD template. The low-TDD GaN epilayers grown on ScN are also highly electrically resistive. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2013729895 date "2008-05-01" @default.
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- W2013729895 title "Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers" @default.
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- W2013729895 doi "https://doi.org/10.1002/pssa.200778608" @default.
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