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- W2013746168 abstract "We report recent progress in chemically assisted ion beam etching (CAIBE) of GaN/AlGaNmaterials leading to improved performance of 405nm blue lasers fabricated with etched mirrors.Using a proprietary Etched Facet Technology (EFT) designed for GaN, we have fabricated ridgelasers in conventional GaN/sapphire material. Typical 3mm ridge lasers with 600mm cavity lengthsexhibit threshold currents of 150mA with high yield and cross wafer uniformity. This represents afactor of five reduction in threshold current over previous results. Additional processing (such asFIB) was not required to improve the mirror verticality and smoothness as in previous work.Continuing improvements in laser performance are anticipated with further optimization of facetsmoothness, laser design, and improved epitaxial material. We are also investigating the benefits ofshorter cavity lasers, made feasible by etching, to realize improvements in laser reliability and yield.The yield advantage is based on the concept that shorter cavity devices will intercept fewer defectsper device. Combined with EFT advantages like low cost wafer-scale testing and monolithicintegration, this is a promising approach for next generation blue lasers for optical storageapplications." @default.
- W2013746168 created "2016-06-24" @default.
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- W2013746168 date "2007-02-08" @default.
- W2013746168 modified "2023-10-14" @default.
- W2013746168 title "Progress in etched facet technology for GaN and blue lasers" @default.
- W2013746168 cites W2054539494 @default.
- W2013746168 doi "https://doi.org/10.1117/12.701425" @default.
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