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- W2013753885 abstract "We investigated persistent photoconductivity in doped CdTe-based ternary wide gap semiconductors Cd1−xZnxTe, Cd1−xMnxTe and Cd1−xMgxTe. The samples have been grown by molecular beam epitaxy. The relaxation of the persistent photoconductivity at temperatures around 150 K was found to show some unusual behaviour not reported up to now. The resistance measured at a given temperature after turning off the illumination does not relax to the value obtained when cooling the sample in the dark from room temperature to this temperature. The resistance value approached is lower than the dark value and approximately equal to the resistance obtained when warming the sample to a given temperature after illumination at lower temperature. This cannot be explained in terms of existing models for persistent photoconductivity. The persistent photoconductivity in our samples seems to consist of two components: one of them shows a relaxation behaviour, the other one some similarity to a phase transition effect." @default.
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- W2013753885 date "1994-08-01" @default.
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- W2013753885 title "Persistent photoconductivity in CdTe-based II–VI-semiconductors" @default.
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- W2013753885 doi "https://doi.org/10.1016/0038-1098(94)90792-7" @default.
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