FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2013776660> ?p ?o ?g. }

• W2013776660 endingPage "1641" @default.
• W2013776660 startingPage "1631" @default.
• W2013776660 abstract "High-field electron transport in GaAs-based p-i-n nanostructure semiconductors has been studied by transient picosecond Raman spectroscopy at T=80 K. Both electron-distribution functions and electron-drift velocities have been directly measured as a function of (1) excitation photon energy, (2) electron density, and (3) electric-field intensity. Our experimental results show that for incident photon energies ensuremath{Elzxh}ensuremath{omega}=1.951 and 1.92 eV, as the injected electron density was increased from n=${10}^{17}$ to ${10}^{18}$ ${mathrm{cm}}^{mathrm{ensuremath{-}}3}$, the measured drift velocity was found to decrease substantially; on the other hand, the observed electron-distribution function changed from an extremely nonequilibrium one to an almost shifted Fermi-Dirac distribution. When the electric-field intensity E was increased from 15 to 35 kV/cm, the electron-drift velocity did not change significantly. As the incident photon energy ensuremath{Elzxh}ensuremath{omega} was decreased to 1.83 eV, the electron-distribution function remained extremely nonequilibrium even for an injected electron density n=${10}^{18}$ ${mathrm{cm}}^{mathrm{ensuremath{-}}3}$. All of these experimental results were compared with ensemble Monte Carlo calculations." @default.
• W2013776660 created "2016-06-24" @default.
• W2013776660 creator A5004696693 @default.
• W2013776660 creator A5036068315 @default.
• W2013776660 creator A5049518819 @default.
• W2013776660 creator A5065838439 @default.
• W2013776660 creator A5066291774 @default.
• W2013776660 creator A5069403761 @default.
• W2013776660 creator A5075598737 @default.
• W2013776660 creator A5078543343 @default.
• W2013776660 creator A5090441560 @default.
• W2013776660 date "1995-01-15" @default.
• W2013776660 modified "2023-10-14" @default.
• W2013776660 title "Transient picosecond Raman studies of high-field electron transport in GaAs-basedp-i-nnanostructure semiconductors" @default.
• W2013776660 cites W1966227267 @default.
• W2013776660 cites W1989480260 @default.
• W2013776660 cites W1999912317 @default.
• W2013776660 cites W2001057202 @default.
• W2013776660 cites W2006136623 @default.
• W2013776660 cites W2008012108 @default.
• W2013776660 cites W2008840728 @default.
• W2013776660 cites W2012802267 @default.
• W2013776660 cites W2018171907 @default.
• W2013776660 cites W2036778230 @default.
• W2013776660 cites W2046314958 @default.
• W2013776660 cites W2046516974 @default.
• W2013776660 cites W2048393259 @default.
• W2013776660 cites W2059800115 @default.
• W2013776660 cites W2060022237 @default.
• W2013776660 cites W2066243469 @default.
• W2013776660 cites W2069194305 @default.
• W2013776660 cites W2080741673 @default.
• W2013776660 cites W2081477453 @default.
• W2013776660 cites W2086895824 @default.
• W2013776660 cites W2100039051 @default.
• W2013776660 cites W2109522465 @default.
• W2013776660 doi "https://doi.org/10.1103/physrevb.51.1631" @default.
• W2013776660 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/9978882" @default.
• W2013776660 hasPublicationYear "1995" @default.
• W2013776660 type Work @default.
• W2013776660 sameAs 2013776660 @default.
• W2013776660 citedByCount "18" @default.
• W2013776660 countsByYear W20137766602019 @default.
• W2013776660 countsByYear W20137766602021 @default.
• W2013776660 crossrefType "journal-article" @default.
• W2013776660 hasAuthorship W2013776660A5004696693 @default.
• W2013776660 hasAuthorship W2013776660A5036068315 @default.
• W2013776660 hasAuthorship W2013776660A5049518819 @default.
• W2013776660 hasAuthorship W2013776660A5065838439 @default.
• W2013776660 hasAuthorship W2013776660A5066291774 @default.
• W2013776660 hasAuthorship W2013776660A5069403761 @default.
• W2013776660 hasAuthorship W2013776660A5075598737 @default.
• W2013776660 hasAuthorship W2013776660A5078543343 @default.
• W2013776660 hasAuthorship W2013776660A5090441560 @default.
• W2013776660 hasConcept C108225325 @default.
• W2013776660 hasConcept C120665830 @default.
• W2013776660 hasConcept C121332964 @default.
• W2013776660 hasConcept C125485243 @default.
• W2013776660 hasConcept C131751877 @default.
• W2013776660 hasConcept C147120987 @default.
• W2013776660 hasConcept C184779094 @default.
• W2013776660 hasConcept C185544564 @default.
• W2013776660 hasConcept C186603090 @default.
• W2013776660 hasConcept C26873012 @default.
• W2013776660 hasConcept C2779557605 @default.
• W2013776660 hasConcept C43647195 @default.
• W2013776660 hasConcept C520434653 @default.
• W2013776660 hasConcept C55005982 @default.
• W2013776660 hasConcept C60799052 @default.
• W2013776660 hasConcept C62520636 @default.
• W2013776660 hasConcept C83581075 @default.
• W2013776660 hasConceptScore W2013776660C108225325 @default.
• W2013776660 hasConceptScore W2013776660C120665830 @default.
• W2013776660 hasConceptScore W2013776660C121332964 @default.
• W2013776660 hasConceptScore W2013776660C125485243 @default.
• W2013776660 hasConceptScore W2013776660C131751877 @default.
• W2013776660 hasConceptScore W2013776660C147120987 @default.
• W2013776660 hasConceptScore W2013776660C184779094 @default.
• W2013776660 hasConceptScore W2013776660C185544564 @default.
• W2013776660 hasConceptScore W2013776660C186603090 @default.
• W2013776660 hasConceptScore W2013776660C26873012 @default.
• W2013776660 hasConceptScore W2013776660C2779557605 @default.
• W2013776660 hasConceptScore W2013776660C43647195 @default.
• W2013776660 hasConceptScore W2013776660C520434653 @default.
• W2013776660 hasConceptScore W2013776660C55005982 @default.
• W2013776660 hasConceptScore W2013776660C60799052 @default.
• W2013776660 hasConceptScore W2013776660C62520636 @default.
• W2013776660 hasConceptScore W2013776660C83581075 @default.
• W2013776660 hasIssue "3" @default.
• W2013776660 hasLocation W20137766601 @default.
• W2013776660 hasLocation W20137766602 @default.
• W2013776660 hasOpenAccess W2013776660 @default.
• W2013776660 hasPrimaryLocation W20137766601 @default.
• W2013776660 hasRelatedWork W1973483522 @default.
• W2013776660 hasRelatedWork W1973827995 @default.
• W2013776660 hasRelatedWork W1977512768 @default.
• W2013776660 hasRelatedWork W1981843301 @default.
• W2013776660 hasRelatedWork W1997157746 @default.

• next