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- W2013796209 abstract "Abstract A new process for polymeric gate insulator in field-effect transistors was proposed. Fourier transform infrared absorption spectra were measured in order to identify ODPA–ODA polyimide. Its breakdown field and electrical conductivity were measured. Organic thin-film transistors with a stacked–inverted top-contact structure was fabricated to demonstrate that thermally evaporated polyimide films could be used as a gate insulator. As a result, the transistor performance with evaporated polyimide was similar with spin-coated polyimide. It seems that the mass-productive in-situ solution-free processes for organic thin-film transistors are possible by using the proposed method without breaking vacuum." @default.
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- W2013796209 date "2003-09-01" @default.
- W2013796209 modified "2023-09-27" @default.
- W2013796209 title "Organic thin-film transistors with ODPA–ODA polyimide as a gate insulator through vapor deposition polymerization" @default.
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- W2013796209 doi "https://doi.org/10.1016/s0040-6090(03)00881-2" @default.
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