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- W2013802034 abstract "We studied cathodoluminescence (CL) spectral variations in the vicinity of the V-defects in InGaN single quantum well (SQW) films by using our newly developed SE-SEM-CL. The peak intensity and peak wavelength of the CL peaks around 448 and 400 nm were found to change significantly near the apex of a V-defect. These variations were mainly attributed to a change in the In content of the InGaN SQW layer in the sidewalls and apex of the V-defect. Furthermore, an abnormal change was observed in the CL peak at 365 nm near the apex of the V-defect; this change was mainly caused by the stress induced by a force at the film edge that results from the thermal expansion differences between the film and the GaN layer. On the basis of the obtained results, we proposed a model of the formation of V-defects by selective termination of the threading defects on the (0001) surface of pseudomorphic InGaN SQW and GaN buffer layers by In." @default.
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- W2013802034 date "2009-03-30" @default.
- W2013802034 modified "2023-09-27" @default.
- W2013802034 title "Characterizing nanometer-sized V-defects in InGaN single quantum well films by high-spatial-resolution cathodoluminescence spectroscopy" @default.
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- W2013802034 doi "https://doi.org/10.1063/1.3104850" @default.
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