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• W2013820711 abstract "This paper deals with the effects of the growth parameters, the position of the substrate, the reactant gas flow rate and the substrate temperature, upon the epitaxial growth rate of GaN on (0001) sapphire substrates. The growth technique used was the chemical vapor deposition method utilizing Ga, HCl and NH3. The crystal growth rate in the presence of excess NH3 increases linearly with the quantity of Ga transported from the source zone, whereas it decreases exponentially with the distance from the inlet nozzle end. The activation energy for the GaN formation is estimated to be about 1.1 eV (25 kcal/mol), and this energy is interpreted as that for the surface reaction step. These results are discussed from a simple chemical kinetics standpoint." @default.
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• W2013820711 date "1974-03-01" @default.
• W2013820711 modified "2023-10-14" @default.
• W2013820711 title "Kinetics of the epitaxial growth of GaN using Ga, HCl and NH3" @default.
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• W2013820711 doi "https://doi.org/10.1016/0022-0248(74)90050-5" @default.
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