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• W2013903579 abstract "This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation." @default.
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• W2013903579 date "2014-03-31" @default.
• W2013903579 modified "2023-09-25" @default.
• W2013903579 title "Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors" @default.
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• W2013903579 doi "https://doi.org/10.1063/1.4868430" @default.
• W2013903579 hasPublicationYear "2014" @default.
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