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- W2013903610 abstract "The electrical properties of oxide layers grown on Si in N 2 O ambient were found a function of oxide growth temperature and oxide thickness. In general, the properties of the oxide were improved when the oxide growth temperature was 1150 o C and higher. The parameters of interest were oxide fixed charge density, leakage current, and stress induced degradation. The degradation in 10 nm oxide was found less compared with that in 7 nm oxide. The formation of more silicon-nitrogen bonds at higher growth temperature and subsequent reduction in silicon-oxygen bonds were used to explain the observations" @default.
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- W2013903610 title "Effects of Oxide Thickness and Oxidation Parameters on the Electrical Characteristics of Thin Oxides Grown by Rapid Thermal Oxidation of Si in N 2 O" @default.
- W2013903610 doi "https://doi.org/10.1149/1.2059306" @default.
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