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- W2013905521 abstract "Varying thicknesses of the HfO 2 films prepared by atomic layer deposition (ALD) were compared in terms of electrical properties and reliability. Scaling the physical thickness of the HfO 2 dielectric did not increase the capacitance as expected due to the thicker interfacial SiO X layer obtained by the oxidation process used for thermal annealing. After thermal annealing, HfO 2 crystallization increased with the thickness of HfO 2 film, which then increases the dielectric constant for the bulk HfO 2 film. The breakdown behaviors of the HfO 2 gate dielectric film were not scaled to thickness, improved with HfO 2 thickness until saturation. The reliability characteristics of the HfO 2 dielectric under unipolar AC stressing were also evaluated. Dielectric breakdown failure time of unipolar AC stressing becomes longer in comparison to that stressed in constant voltage stress. As the thickness of the HfO 2 dielectric increases, a larger lifetime enhancement is detected due to the effective charge de-trapping for thicker dielectrics under AC stressing. ► Thickness effects of HfO 2 films on electrical properties and reliabilityare studied.► HfO 2 crystallization and dielectric constant increased with HfO 2 thickness.► Breakdown behaviors of HfO 2 gate dielectric film improved with HfO 2 thickness.► A larger lifetime enhancement for thicker dielectrics under AC stressing." @default.
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- W2013905521 date "2013-01-01" @default.
- W2013905521 modified "2023-09-25" @default.
- W2013905521 title "Deposition cycle of atomic layer deposition HfO2 film: Effects on electrical performance and reliability" @default.
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- W2013905521 doi "https://doi.org/10.1016/j.tsf.2012.09.089" @default.
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