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• W2013918447 abstract "Silicon carbide plasma etching results are reported. Etching experiments are performed in a distributed electron cyclotron resonance reactor, using a SF6/O2 gas mixture, on both 3C- and 6H-SiC. A special interest has been given to the slope of the etched sidewalls. Slopes between 30° and 80° have been achieved by varying selectivities between SiC and the SiO2 masking layer. Two parameters have been investigated to modulate selectivity: bias voltage and O2 additive flow. A wide range of selectivities (from 1 to 6.5) has been obtained for suitable etch rate (100 to 270 nm/min) with very smooth surfaces." @default.
• W2013918447 created "2016-06-24" @default.
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• W2013918447 date "1996-07-08" @default.
• W2013918447 modified "2023-10-14" @default.
• W2013918447 title "Angle etch control for silicon carbide power devices" @default.
• W2013918447 cites W2486637641 @default.
• W2013918447 doi "https://doi.org/10.1063/1.117935" @default.
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