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• W2013935720 abstract "Strain-induced mobility enhancement in thin-body MOSFETs is studied and the impact of silicon body thickness scaling on piezoresistance coefficients is analyzed to facilitate stress engineering for these advanced transistor structures. Various stressors are benchmarked in terms of their effectiveness to enhance nanometer-gate-length thin-body MOSFET performance." @default.
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• W2013935720 date "2012-10-01" @default.
• W2013935720 modified "2023-09-25" @default.
• W2013935720 title "Effectiveness of strained-Si technology for thin-body MOSFETs" @default.
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• W2013935720 doi "https://doi.org/10.1109/soi.2012.6404369" @default.
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