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• W2013954499 abstract "Plasma hydrogenation for 3 h at 250 °C of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition, followed by a 5-min, 400 °C anneal to restore the passivated shallow donor electrical activity, increases the reverse breakdown voltage of Schottky diode structures from 2.5 to 6.5 V. This improvement appears to be a result of the passivation by atomic hydrogen of defects such as threading dislocations caused by the large (4%) lattice mismatch between GaAs and Si. A reduced Schottky barrier height is exhibited by hydrogenated samples, consistent with As depletion of the surface occurring during the long duration plasma processing." @default.
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• W2013954499 date "1987-08-17" @default.
• W2013954499 modified "2023-09-26" @default.
• W2013954499 title "Hydrogenation of GaAs on Si: Effects on diode reverse leakage current" @default.
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• W2013954499 doi "https://doi.org/10.1063/1.98378" @default.
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