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• W2013973008 abstract "The formation and annihilation of hydrogen (H)-related complexes were investigated in boron (B)- or phosphorus (P)-doped Si treated with high concentration of atomic H. The passivation and reactivation process of dopant carriers were significantly different between the p-type and n-type specimens. The differences are explained by the stable sites of the H atoms in the p-type and n-type specimens and, in turn, by the formation of H-related defects: i.e., H multiple trapping centers are formed by bond-breaking due to H atoms only in p-type B-doped Si. The formation of such defects retards the reactivation of B dopants by annealing." @default.
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• W2013973008 date "2007-12-01" @default.
• W2013973008 modified "2023-10-18" @default.
• W2013973008 title "Passivation and reactivation of carriers in B- and P-doped Si treated with atomic hydrogen" @default.
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• W2013973008 doi "https://doi.org/10.1016/j.physb.2007.08.140" @default.
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