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- W2013987968 abstract "We have investigated Fe electrode/SrFeO3-x stacking layer as resistance random access memory which is called next generation non-volatile memory. In this stacking system, positive magnetoresistance (MR) due to exchange coupling between Fe electrode and SrFeO3-x layer was observed in initial state. After applying external electric field, in the each resistance state which is high resistance state or low resistance state, MR behaviour was changed from positive MR to negative MR. This behaviour is more likely due to that exchange coupling and the phase of SrFeO3-x layer were changed by electric field and we realized that it is possible to control magnetic property and series of SrFeO3-x phase by using external electric field." @default.
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- W2013987968 date "2011-09-14" @default.
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- W2013987968 title "Magnetic and electric field induced resistance change in SrFeO thin film" @default.
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