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- W2013991511 abstract "The electrical activities of stacking faults (SFs) and partial dislocations in 4H-SiC homoepitaxial films were investigated by using the electron-beam-induced current (EBIC) technique. The basal plane dislocation was dissociated into Si(g) 30∘ and C(g) 30∘ partials under electron-beam irradiation, with a SF formed in between. The SF shows bright contrast at RT and dark contrast at 50 K in EBIC images. The reasons were discussed according to the quantum-well state of SF. C(g) 30∘ partial is always more electrically active than Si(g) 30∘ partial at each specific accelerating voltage. The EBIC contrasts of those two partials were discussed with the number of recombination centers." @default.
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- W2013991511 date "2009-04-01" @default.
- W2013991511 modified "2023-10-17" @default.
- W2013991511 title "Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films" @default.
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- W2013991511 doi "https://doi.org/10.1016/j.spmi.2008.10.021" @default.
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