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- W2014001985 abstract "High-Tc superconducting Ba2YCu3Ox thin films have been epitaxially grown on Si(100) substrates with the epitaxially grown Zr02 or yttria-stabilized zirconia (YSZ) as a buffer layer. The thin films were prepared by rf magnetron sputtering of the stoichiometric Ba2YCu30x target below 700°C. An adequate positive substrate bias was necessary to ensure surface smoothness and to show the superconducting transition above liquid nitrogen temperature without any post-treatment. The highest Tc(onset) and Tc(end) observed were 88K and 84K, respectively. The critical current density was Mx105A/cm2 at 50K. Using the silicon substrates patterned with the trench, the superconducting microbridge junction has been fabricated in as-grown Ba2YCu3Ox thin films by rf-magnetron sputtering. The microbridge junctions with constrictions as small as submicron dimension were obtained. These microbridge junctions behaved as Josephson junction and were observed microwave-induced steps. Based on Likharev's theory, it is suggested that these devices show Josephson effect in the Abrikosov vortex motion region." @default.
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- W2014001985 date "1990-03-19" @default.
- W2014001985 modified "2023-10-17" @default.
- W2014001985 title "Epitaxial and As-Grown Preparation of Ba 2 YCu 3 O x Thin Films on Si with Epitaxially Grown ZrO 2 as a Buffer Layer" @default.
- W2014001985 doi "https://doi.org/10.1117/12.965148" @default.
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