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• W2014025123 abstract "The dielectric function of heavily doped $p$-type ${text{Ge}}_{0.98}{text{Sn}}_{0.02}$ alloys was determined using infrared spectroscopic ellipsometry. The free holes contribute a Drude-like term to the dielectric response, from which the resistivity and carrier relaxation time can be determined. The transport parameters extracted from such optical experiments are similar to those found for pure Ge with comparable doping levels. Optical transitions between the split-off, light-hole, and heavy-hole bands contribute a second term to the dielectric function. The overall line shape of the dielectric function corresponding to these transitions shows differences between ${text{Ge}}_{0.98}{text{Sn}}_{0.02}$ and pure Ge. These differences may provide important clues to the valence-band electronic structure of ${text{Ge}}_{1ensuremath{-}y}{text{Sn}}_{y}$ alloys." @default.
• W2014025123 created "2016-06-24" @default.
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• W2014025123 date "2009-09-25" @default.
• W2014025123 modified "2023-10-18" @default.
• W2014025123 title "Infrared dielectric function ofp-typeGe0.98Sn0.02alloys" @default.
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• W2014025123 doi "https://doi.org/10.1103/physrevb.80.125209" @default.
• W2014025123 hasPublicationYear "2009" @default.
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