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- W2014048445 abstract "Defect profiles near the denuded zone in intrinsic-gettering (IG)-treated Czochralski (CZ) Si wafers, which had been immersed in Secco etching solution in advance, were measured using a wafer defect analyzer. It is clear that measurement of oxygen precipitates is completed near the denuded zone of 125-mm-diam Si wafers in a few hours, and that in the region of precipitate densities from 5×10 4 to 10 6 (cm -2 ) that were counted by means of Nomarski microscope, the systematical error of this wafer defect analyzer is smaller than 10%." @default.
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- W2014048445 date "1992-09-01" @default.
- W2014048445 modified "2023-10-16" @default.
- W2014048445 title "Quick and Quantitative Measurement of Oxygen Precipitates near Denuded Zone in Intrinsic-Gettering-Treated Czochralski-Si Wafers" @default.
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- W2014048445 doi "https://doi.org/10.1143/jjap.31.l1309" @default.
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