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- W2014092977 abstract "Pulsed KrF laser annealing and vacuum annealing on the interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si were studied. For the Ni/ Si0.76Ge0.24 films annealed at temperatures above 300 °C, some Ge-rich Si1−xGex grains were formed between the Ge-deficient Ni germanosilicide grains, resulting in the island structure. For Ni/Si films homogeneous epitaxial NiSi2 films could be grown even at 600 °C, Ni silicide (germanosilicide) associated with the amorphous overlayer was generally formed at lower energy densities for Ni/Si, NiSi/Si, Ni/Si0.76Ge0.24 and Ni(Si1−xGex)/Si0.76Ge0.24 systems, respectively. At higher energy densities constitutional supercooling occurred. The energy densities at which constitutional supercooling appeared were higher for NiSi and Ni(Si1−xGex) than for Ni. For the continuous Ni(Si1−xGex) films grown at 200 °C in a vacuum furnace, subsequent laser annealing at an energy density of 0.6–1.0 J cm−2 have shown to render homogeneous Ni(Si0.76Ge0.24)2 and Si0.76Ge0.24 films without the island structure and Ge segregation." @default.
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- W2014092977 date "1998-07-01" @default.
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- W2014092977 title "Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing" @default.
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