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• W2014093213 abstract "We studied the epitaxial growth of iron silicide ($ensuremath{epsilon}text{ensuremath{-}}mathrm{Fe}mathrm{Si},ensuremath{beta}text{ensuremath{-}}mathrm{Fe}{mathrm{Si}}_{2}$, and $ensuremath{alpha}text{ensuremath{-}}mathrm{Fe}{mathrm{Si}}_{2}$) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The $ensuremath{epsilon}text{ensuremath{-}}mathrm{Fe}mathrm{Si}$ or $ensuremath{alpha}text{ensuremath{-}}mathrm{Fe}{mathrm{Si}}_{2}$ nanodots were epitaxially grown in a dome shape with an average size of $ensuremath{sim}5phantom{rule{0.3em}{0ex}}mathrm{nm}$ and an ultrahigh density $(>{10}^{12}phantom{rule{0.3em}{0ex}}{mathrm{cm}}^{ensuremath{-}2})$ on the surface. We formed $ensuremath{sim}2text{ensuremath{-}}mathrm{nm}$ high and $ensuremath{sim}8text{ensuremath{-}}mathrm{nm}$ wide $ensuremath{beta}text{ensuremath{-}}mathrm{Fe}{mathrm{Si}}_{2}$ nanodots in a dome shape with a density of $ensuremath{sim}5ifmmodetimeselsetexttimesfi{}{10}^{11}phantom{rule{0.3em}{0ex}}{mathrm{cm}}^{ensuremath{-}2}$ on the surface. Cross-sectional TEM images revealed that the $ensuremath{beta}text{ensuremath{-}}mathrm{Fe}{mathrm{Si}}_{2}$ growth continued beneath the Si surface. The part of the $ensuremath{beta}text{ensuremath{-}}mathrm{Fe}{mathrm{Si}}_{2}$ nanodot beneath the surface was a disk shape, which was $ensuremath{sim}5phantom{rule{0.3em}{0ex}}mathrm{nm}$ thick and $ensuremath{sim}20phantom{rule{0.3em}{0ex}}mathrm{nm}$ wide, with an abrupt interface parallel to the Si (111) plane. The nanodots were epitaxially grown and had almost no misfit dislocations near the $ensuremath{beta}text{ensuremath{-}}mathrm{Fe}{mathrm{Si}}_{2}∕mathrm{Si}$ interface, which were strained by the lattice mismatch. The size distribution of the iron silicide dots was determined by Ostwald ripening with the activation energy of dot edge mobility of $ensuremath{sim}1.3phantom{rule{0.3em}{0ex}}mathrm{eV}$." @default.
• W2014093213 created "2016-06-24" @default.
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• W2014093213 date "2005-08-02" @default.
• W2014093213 modified "2023-10-01" @default.
• W2014093213 title "Formation of strained iron silicide nanodots by Fe deposition on Si nanodots on oxidized Si (111) surfaces" @default.
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• W2014093213 doi "https://doi.org/10.1103/physrevb.72.075404" @default.
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