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- W2014103678 abstract "Low threshold, 633 nm diode lasers are demonstrated. These devices contain a single, 80 Å, tensile-strained Ga0.6In0.4P quantum well (QW) active region, and Al0.5In0.5P cladding layers, grown by low-pressure organometallic vapor phase epitaxy on misoriented substrates. Operating characteristics are compared with low-threshold, 680 nm compressively strained Ga0.4In0.6P QW lasers. Although performance is not as good as for the 680 nm devices, the 633 nm lasers have characteristic temperature T0∼60 K and low pulsed threshold current density (400 A/cm2). These improved characteristics are believed due to the incorporation of a single, tensile-strained QW, along with (Al0.6Ga0.4)0.5In0.5P confining layers, which offer increased electron confinement." @default.
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- W2014103678 date "1992-04-20" @default.
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- W2014103678 title "Low threshold, 633 nm, single tensile‐strained quantum well Ga<sub>0.6</sub>In<sub>0.4</sub>P/(Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>)<sub>0.5</sub>In<sub>0.5</sub>P laser" @default.
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- W2014103678 doi "https://doi.org/10.1063/1.107153" @default.
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