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• W2014104495 abstract "AlGaN/GaN pnp heterojunction bipolar transistors were fabricated using a low-damage dry-etch process, and the dc characteristics measured up to 250 °C. In the common–base mode, the collector current was approximately equal to the emitter current under all conditions. Although not optimized for power operations, the devices were tested up to power densities of ∼50 kW cm−2. The dc current gain was in the range 20–25 at room temperature. The pnp configuration avoids the problem of high base sheet resistance encountered with npn-AlGaN/GaN devices." @default.
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• W2014104495 date "2000-05-15" @default.
• W2014104495 modified "2023-09-26" @default.
• W2014104495 title "Direct-current characteristics of <i>pnp</i> AlGaN/GaN heterojunction bipolar transistors" @default.
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• W2014104495 doi "https://doi.org/10.1063/1.126524" @default.
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