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• W2014137224 abstract "The atomic structure occurring at the interface between Si(111) and thin GaAs epitaxial overlayers has a pronounced effect on the surface electronic structure, thus making it possible to infer structural information by comparing measured surface-state energies with those calculated for possible interface bonding arrangements. The atomically abrupt interface...SiAsGaAs, in addition to being energetically very unfavorable, is inconsistent with measured valence-band photoemission spectroscopy. Our results indicate that the interface is not atomically abrupt." @default.
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• W2014137224 date "1988-12-26" @default.
• W2014137224 modified "2023-09-27" @default.
• W2014137224 title "Electronic and Atomic Structure of GaAs Epitaxial Overlays on Si(111)" @default.
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• W2014137224 doi "https://doi.org/10.1103/physrevlett.61.2957" @default.
• W2014137224 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/10039274" @default.
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