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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2014137989> ?p ?o ?g. }

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• W2014137989 abstract "High-k materials deposited directly on silicon exhibit an interfacial layer between the grown layer and the underlying substrate. This is of particular concern in metal–oxide–semiconductor technologies where these layers have a deleterious effect on the overall capacitance of the resulting devices. In this letter, the growth and properties of this silicatelike interfacial layer are examined after postdeposition anneals in a vacuum, inert, and oxidizing atmospheres. X-ray reflectivity, Fourier transform infrared spectroscopy, and x-ray photoelectron spectroscopy have been used to characterize the growth and properties of this interfacial layer." @default.
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• W2014137989 date "2002-10-28" @default.
• W2014137989 modified "2023-10-18" @default.
• W2014137989 title "Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si" @default.
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• W2014137989 doi "https://doi.org/10.1063/1.1517407" @default.
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