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• W2014142986 abstract "Vanadium dioxide (VO2), with its characteristic metal-insulator phase transition, is a prospective active candidate to realize tunable optical devices operating at terahertz (THz) frequencies. However, the abrupt phase transition restricts its practical use in analog-like continuous applications. Incorporation of tungsten is a feasible approach to alter the phase transition properties of thin VO2 films. We show that amplitude THz modulation depth of ∼65%, characteristic phase transition temperature of ∼40 °C, and tuning range larger than 35 °C can be achieved with W-doped VO2 films grown on sapphire substrates. W-doped VO2 films can also be used to suppress Fabry-Perot resonances at THz frequencies but at temperatures much lower than that observed for undoped VO2 films. The gradual phase transition temperature window allows for precise control of the W-doped VO2 optical properties for future analog based THz devices." @default.
• W2014142986 created "2016-06-24" @default.
• W2014142986 creator A5016089538 @default.
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• W2014142986 date "2014-11-17" @default.
• W2014142986 modified "2023-10-17" @default.
• W2014142986 title "Continuous tuning of W-doped VO2 optical properties for terahertz analog applications" @default.
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• W2014142986 doi "https://doi.org/10.1063/1.4902056" @default.
• W2014142986 hasPublicationYear "2014" @default.
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