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• W2014148571 abstract "The catalyst-free molecular beam epitaxial growth of GaN nanowires and their heterostructures on a SiOx template is studied in detail. It was found that by optimizing the growth temperature, highly uniform and vertically aligned GaN nanowires and InGaN/GaN heterostructures with excellent optical properties can be obtained on a SiOx template in a large-scale. This work provides an entirely new avenue for GaN nanowire based optoelectronic devices." @default.
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• W2014148571 date "2013-01-01" @default.
• W2014148571 modified "2023-10-16" @default.
• W2014148571 title "Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy" @default.
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• W2014148571 doi "https://doi.org/10.1039/c3nr00387f" @default.
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