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• W2014149498 abstract "Abstract We have investigated, using high energy ion channeling technique, atomic displacements of Si(111) substrates carrying Ag deposits (less than 5 monolayers) of two different morphologies: an epitaxial Ag(111) film formed by deposition at room temperature and an ordered adsorbed structure of Si (111)( 3 × 3 ) R 30°- Ag formed by deposition at 400 °C. It has been found that there is a definite difference in the vertical displacement of Si atoms between these two surfaces, while there is no difference in the lateral displacement. The room temperature deposition of Ag of about 1 monolayer significantly relaxes substantial vertical displacement of the 7 × 7 surface, while the deposition at higher temperature, in contrast, enhances it slightly. Based on a Monte Carlo simulation of ion channeling intensities, the range of possible lateral displacements of Si atoms is determined for various Si (111)( 3 × 3 ) R 30°- Ag structure models proposed so far." @default.
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• W2014149498 date "1990-02-01" @default.
• W2014149498 modified "2023-09-27" @default.
• W2014149498 title "High-energy ion channeling study of the atomic displacement of Si(111) surfaces induced by Ag thin films" @default.
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• W2014149498 doi "https://doi.org/10.1016/0039-6028(90)90155-2" @default.
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