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• W2014201750 abstract "Electron-spin-resonance (ESR) studies of intrinsic ${mathit{P}}_{mathit{b}}$ defects at the (111)Si/${mathrm{SiO}}_{2}$ interface have been carried out as a function of oxidation temperature ${mathit{T}}_{mathrm{ox}}$ for the range 22${mathit{T}}_{mathrm{ox}}$1140 ifmmode^circelsetextdegreefi{}C. The properties of both as-oxidized structures and structures obtained after exhaustive dehydrogenation have been compared, thus separating the H passivation factor. The data reveal drastic differences in the interfacial nature of low-${mathit{T}}_{mathrm{ox}}$ and high-${mathit{T}}_{mathrm{ox}}$ Si/${mathrm{SiO}}_{2}$ structures, the demarcation range being ensuremath{approxeq}750--850 ifmmode^circelsetextdegreefi{}C; while a fairly constant density (${mathit{P}}_{mathit{b}}$)ensuremath{sim}${10}^{13}$ ${mathrm{cm}}^{mathrm{ensuremath{-}}2}$ is found all over the range 300${mathit{T}}_{mathrm{ox}}$800 ifmmode^circelsetextdegreefi{}C, it gradually decreases with increasing ${mathit{T}}_{mathrm{ox}}$ above ensuremath{sim}800 ifmmode^circelsetextdegreefi{}C. Comparison with mechanical-stress data for the Si/${mathrm{SiO}}_{2}$ structure reveals close linear correlation with the average stress ${mathrm{ensuremath{sigma}}}_{mathrm{av}}$ in the superficial ${mathrm{SiO}}_{2}$ film, so that [${mathit{P}}_{mathit{b}}$] is seen to decrease to ${10}^{10}$ ${mathrm{cm}}^{mathrm{ensuremath{-}}2}$---a ${mathit{P}}_{mathit{b}}$-defect ``free'' interface---along with ${mathrm{ensuremath{sigma}}}_{mathrm{av}}$ for ${mathit{T}}_{mathrm{ox}}$ensuremath{rightarrow}1150 ifmmode^circelsetextdegreefi{}C. The underlying physical mechanism is global structure relaxation of the ${mathrm{SiO}}_{2}$ layer initiating at ensuremath{sim}800 ifmmode^circelsetextdegreefi{}C, gradually reducing the need for intrinsic ${mathit{P}}_{mathit{b}}$ generation to account for lattice mismatch.Other distinct variations in the ${mathit{P}}_{mathit{b}}$ resonance also testify to this stress release effect such as the decrease in ${mathit{g}}_{mathrm{ensuremath{parallel}}}$, linewidth narrowing, and change in line-shape symmetry. Line-shape simulations indicate that these effects result from the existence in the ${mathit{T}}_{mathrm{ox}}$800 ifmmode^circelsetextdegreefi{}C range of a variation of ${mathrm{ensuremath{sigma}}}_{mathit{g}mathrm{ensuremath{parallel}}}$=0.000 32 in ${mathit{g}}_{mathrm{ensuremath{parallel}}}$, which strongly narrows upon enhancing ${mathit{T}}_{mathrm{ox}}$. The drop in ${mathit{g}}_{mathrm{ensuremath{parallel}}}$ refers to an average backward relaxation (over ensuremath{approxeq}0.13 AA{}) of the defect Si atoms to a more planar structure (less s-like hybridization), attendant with a downward shift of the ${mathit{P}}_{mathit{b}}$ energy-level distribution over about 0.27 eV. An intrinsic defect, termed the EX center, is observed by ESR in as-oxidized Si oxide films." @default.
• W2014201750 created "2016-06-24" @default.
• W2014201750 creator A5039212753 @default.
• W2014201750 date "1993-07-15" @default.
• W2014201750 modified "2023-10-03" @default.
• W2014201750 title "Structural relaxation of<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=italic>P</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant=italic>b</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>defects at the (111)Si/<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub…" @default.
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• W2014201750 doi "https://doi.org/10.1103/physrevb.48.2418" @default.
• W2014201750 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/10008634" @default.
• W2014201750 hasPublicationYear "1993" @default.
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