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- W2014206557 abstract "The fractional contributions of the various SiHn radicals (n=0–3) to deposition are calculated for low-power, pure-silane rf and dc discharges. This is done using a radical diffusion plus reaction equation, combined with current knowledge of SiH4 dissociation fractionation, of SiHn+SiH4 reactions, and of the distributed source of radicals. The conclusion reached is that more than 98% of neutral radical deposition is by SiH3 for typical deposition pressures (>100 mT at 240 °C). The effect of SiH3+SiH3 reactions at higher power is also evaluated using an estimated reaction rate coefficient (k3). The resulting loss in deposition rate is given as a function of film growth rate and of k3." @default.
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- W2014206557 date "1988-04-01" @default.
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- W2014206557 title "Neutral radical deposition from silane discharges" @default.
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- W2014206557 doi "https://doi.org/10.1063/1.341034" @default.
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