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- W2014238723 abstract "Abstract AlN layers with a thickness of 250 nm were grown by plasma-assisted gas source molecular-beam epitaxy on Si(111) at substrate temperatures between 600 °C and 900 °C. The surface morphology and microstructure of the AlN layers were analyzed by scanning and transmission electron microscopy. Different defect types are observed in the AlN layers and at the AlN/Si(111) interfaces as a function of the temperature: inclusions of pure Al in the Si-substrate, crystallites of the cubic AlN phase, dislocations, stacking faults and inversion domain boundaries. The formation and concentration of the defects depends strongly on the substrate temperature during the growth. X-ray diffraction rocking curves for the (0002) reflection yield minimum full width at half maximum values for the sample grown at the 900 °C under Al-rich conditions indicating optimum structural quality. However, the discussion of the entity of defects will show that a more differentiated view is required to assess the overall quality of the AlN layers." @default.
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- W2014238723 date "2012-01-01" @default.
- W2014238723 modified "2023-09-27" @default.
- W2014238723 title "Transmission electron microscopy investigation of AlN growth on Si(111)" @default.
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- W2014238723 doi "https://doi.org/10.1016/j.jcrysgro.2011.11.038" @default.
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