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- W2014256843 abstract "Coaxial nanocables of gallium phosphide (GaP) core with three different-typed single and double shells (i.e., silicon oxide (SiOx), carbon (C), and SiOx/C) were exclusively synthesized by the chemical vapor deposition method. The GaP/SiOx nanocables were directly grown on gold-deposited silicon substrates. Deposition of C on the GaP nanowires and GaP/SiOx nanocables produces the GaP/C and GaP/SiOx/C nanocables, respectively. The outer diameter of the nanocables is <50 nm. The thickness and crystallinity of the C outer layers were controllable by the growth conditions. X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence reveal that the outer layer formation reduces the surface defects of GaP nanowires. A great enhancement of the conductivity due to the C outer layers has been measured by the four-probe method. The growth process of these nanocables has been discussed on the basis of the vapor−liquid−solid mechanism." @default.
- W2014256843 created "2016-06-24" @default.
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- W2014256843 date "2005-02-12" @default.
- W2014256843 modified "2023-10-09" @default.
- W2014256843 title "Single- and Double-Shelled Coaxial Nanocables of GaP with Silicon Oxide and Carbon" @default.
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- W2014256843 doi "https://doi.org/10.1021/jp046501e" @default.
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