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- W2014266071 abstract "Significant increases in the AlInP Schottky barrier have been obtained by process modification of the metal-semiconductor interface. The resultant barrier height increases (from 0.3 to 0.6 eV) are due to oxygen build-up at the interface, in the form of P2O5. Auger electron spectroscopy studies of the metal-semiconductor interface indicate an excellent correlation between barrier height increases and oxygen build-up at the AlInP interface." @default.
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- W2014266071 title "Material reactions and barrier height variations in sintered AlInP Schottky diodes" @default.
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- W2014266071 doi "https://doi.org/10.1016/0038-1101(79)90053-4" @default.
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