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- W2014341799 abstract "To pattern high resolution integrated circuit substrates for multilevel fabrication processes demands exacting alignment and reregistration procedures of a direct-write electron beam exposure system. A laboratory spot-electron-beam direct-write exposure system (LEBES-D, Perkin-Elmer/ETEC) using a laser interferometer controlled stage with a stage error loop to the beam deflection subsystem has been adopted for fine line patterning applications. Single and multiple subfield overlay writing are performed with undesirable errors stemming from both operator and equipment subsystem factors. An optically read vernier metrology method is used to measure overlay errors to below 0.1 microns." @default.
- W2014341799 created "2016-06-24" @default.
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- W2014341799 date "1984-10-15" @default.
- W2014341799 modified "2023-10-05" @default.
- W2014341799 title "Direct-Write Electron Beam Patterning Reregistration And Metrology" @default.
- W2014341799 doi "https://doi.org/10.1117/12.943059" @default.
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